Design specific variation in pattern transfer by via/contact etch ...

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Etch Model � Etch model, representing mathematical formulation of etch mechanism, provides a relation between fluxes of all etch-important species coming to any point at the etched surface and the etch rate at this point. Example of modeling SiO 2 Etch by Fluorocarbon Plasmas CF x radical fluxes result in SiO 2 etch and C xF y polymer deposition O-atom flux is a major cause of the polymer removal Precursors for the etch reactions are formed at the polymer-SiO2 interface by ion-induced energy reactions: “-Si-O-” + E = “Si-” + “O-”. Energy flux reaching the interface is controlled by the polymer thickness. Radical reactions between Si- and O- from SiO 2 and F and C from gas phase and polymer layer are responsible for the silicon oxide etch Reaction Kinetics x C is the carbon fraction in C xF y polymer layer; θ is the fraction of precursors formed at the SiO 2 - polymer interface Η CxFy is the thickness of polymer layer. Copyright ©2008, Mentor Graphics. 14
Thin & Thick Polymer Regimes T. Tatsumi, M. Matsui, M. Okigawa, and M. Sekine, J. Vac. Sci. Technol. B 18, 1897-1902 (2000) Thin polymer regime Thick polymer regime Copyright ©2008, Mentor Graphics. 15
Page 1 and 2: Design Design Design specific speci
Page 3 and 4: Etch Step in Pattern Transfer Simul
Page 5 and 6: Effects of Aspect Ratio & Microload
Page 7 and 8: • Neutral radical generation •
Page 9 and 10: Mass-balance Differential equation
Page 11 and 12: Radical Flux to the Feature � Whe
Page 13: Die-level analysis: Calculation of
Page 17 and 18: Approximation of “Thin Polymer”
Page 19 and 20: Etch Stop Condition � Etch stops
Page 21 and 22: VCE Input/Output Copyright ©2008,
Page 23 and 24: Calculation of Gas Kinetic Paramete
Page 25 and 26: Calibration Methodology � The maj
Page 27 and 28: VCE Capability Based on accurate ca
Page 29 and 30: VCE Capability Across-die etch hot-
Page 31 and 32: APPLICATIONS of VCE Copyright ©200
Page 33 and 34: Process-Aware Design Optimization v
Page 35 and 36: Process optimization • VCE predic
Page 37 and 38: F Concentration, mass fraction Redu
Page 39 and 40: Averaged pattern density R=1000µm
Page 41 and 42: OBSERVATION: FIB inspection of 0.26
Page 43 and 44: CF2 flux F flux SEMbar (1) in all01
Page 45 and 46: Calibration/Prediction - Resist Mod
Page 47 and 48: Calibration/Prediction - Main Etch
Page 49: Mentor Graphics Corp., San Jose, CA

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