Design specific variation in pattern transfer by via/contact etch ...

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Intra-Feature Radical Transport Resistance Mechanisms of the neutrals transport inside a feature: • The “line-of-sight” – reagents are disappeared after first collision with wall • “Knudsen diffusion” – reagents do not react with walls For Knudsen diffusion - Clausing factor is the probability that a randomly directed species incident at the top of a verticalwalled feature will reach the other end. For the Clausing factor k we can use : 1 for round via of the depth L and radius R k = 1 3 PL 1+ 16 S 3 L 1+ 8 R And k = for the rectangular shaped feature of the perimeter P, area S and the depth L. CF 2 flux impinged the via bottom 2π λ π c λ ⎛ 2 R B 1 CF ⎜ 2 Γ = N CF ( r1 , ϕ ) 2 2 2 2 3 h 1 k 8π R ∫∫ ⎜ ∫∫ + 0 0 ⎜ D 8 R ⎝ rdrdψ 2 2 2 [ λ + r + r − 2r r cos( ϕ −ψ ) ] ⎞ ⎟ ⎟r1dr dϕ ⎟ ⎠ CF 3 1 0 0 1 1 2 2π ⎝ B cO ( ) ( h + λ) ΓO r, ψ = ∫ ∫ 8π 0 ⎛ λ ⎞ R⎜1+ ⎟ h ⎠ 0 N O-atom flux impinged the via bottom O ( r , ϕ) 1 ⎡ ⎢ ⎢⎣ λ h ψ Reactiv e surface r r 1 θ Copyright ©2008, Mentor Graphics. 2 r 1 2 ( ) ( ) 2 2 2 2⎛ ⎞ ⎛ ⎞ h + λ + r + r 1+ + 2r r 1+ cos ϕ −ψ 1 ⎜ ⎝ r dϕdr 1 λ ⎟ h ⎠ 1 1 ⎜ ⎝ ϕ λ ⎟ h ⎠ 12 ⎤ ⎥ ⎥⎦ 3
Die-level analysis: Calculation of distribution of neutral species participating in etch driven reactions at die level – microloading Etch Modeling Backbone CD/Contour Simulation Engine – Etch Model Feature-level analysis: Plasma visibility variation – plasma region visible from every segment of the feature etch profile Etch mechanism Wafer-scale variations & process parameters: Copyright ©2008, Mentor Graphics. 13
Page 1 and 2: Design Design Design specific speci
Page 3 and 4: Etch Step in Pattern Transfer Simul
Page 5 and 6: Effects of Aspect Ratio & Microload
Page 7 and 8: • Neutral radical generation •
Page 9 and 10: Mass-balance Differential equation
Page 11: Radical Flux to the Feature � Whe
Page 15 and 16: Thin & Thick Polymer Regimes T. Tat
Page 17 and 18: Approximation of “Thin Polymer”
Page 19 and 20: Etch Stop Condition � Etch stops
Page 21 and 22: VCE Input/Output Copyright ©2008,
Page 23 and 24: Calculation of Gas Kinetic Paramete
Page 25 and 26: Calibration Methodology � The maj
Page 27 and 28: VCE Capability Based on accurate ca
Page 29 and 30: VCE Capability Across-die etch hot-
Page 31 and 32: APPLICATIONS of VCE Copyright ©200
Page 33 and 34: Process-Aware Design Optimization v
Page 35 and 36: Process optimization • VCE predic
Page 37 and 38: F Concentration, mass fraction Redu
Page 39 and 40: Averaged pattern density R=1000µm
Page 41 and 42: OBSERVATION: FIB inspection of 0.26
Page 43 and 44: CF2 flux F flux SEMbar (1) in all01
Page 45 and 46: Calibration/Prediction - Resist Mod
Page 47 and 48: Calibration/Prediction - Main Etch
Page 49: Mentor Graphics Corp., San Jose, CA

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