Schaltungstechnik

5.1 Eigenschaften und Kennlinien von Bip.-Transistoren 279
use IEEE_proposed.electrical_systems.all;
use IEEE_proposed.fundamental_constants.all;
entity Transistor is
generic
(iss : current := 1.0e-16; -- Transport saturation current
nr : real := 1.0; --Reverse current emission coefficient
nf : real := 1.0; --Forward current emission coefficient
br : real := 1.0; -- Ideal maximum reverse beta
bf : real := 100.0; -- Ideal maximum forward beta
isc : current := 0.0; -- Leakage current collector diode
nc : real := 2.0; -- BC leakage emission coefficient
ise : current := 0.0; -- Leakage current emitter diode
ne : real := 1.5; --BE leakage emission coefficient
vaf : voltage := 1.0e15; -- Forward early voltage
var : voltage := 1.0e15; -- Reverse early voltage
ikf : current := 1.0e15; -- Corner current (forward)
ikr : current := 1.0e15; -- Corner current (reverse)
nkf : real := 0.5; -- Exp. for high current beta roll-off
rb : resistance := 0.0; -- Zero bias base resistance
rc : resistance := 0.0; -- Collector resistance
re : resistance := 0.0; -- emitter resistance
cjc : capacitance := 0.0;--BC zero bias depletion capacit.
vjc : voltage := 0.75; -- BC built in potential
mjc : real := 0.33; -- BC junction exponential factor
cje : capacitance := 0.0; --BE zero bias depletion cap.
vje : voltage := 0.75; -- BE built in potential
mje : real := 0.33; -- BE junction exponential factor
fc : real := 0.5; --Coeff.-> forward bias depletion cap.
tf : real := 0.0; -- Ideal forward transit time
tr : real := 0.0; -- Ideal reverse transit time
temp : real := 300.0); --Parameter measurement temperature
port (terminal collector, base, emitter : electrical);
end entity Transistor;
-- NPN-Transistor --------------------------------------------architecture
Level1_npn of Transistor is
-- terminals
terminal n1, n2, n3 : electrical;
-- constants
constant vt : real := temp * PHYS_K / PHYS_Q;
-- branche quantities
quantity vbc across ibcd1, ibcd2, ibcc, ibci through n2 to n1;
quantity vbe across ibed1, ibed2, ibec, ibei through n2 to n3;
quantity vce across ic through n1 to n3;
quantity vbe_pin across base to emitter;
quantity vce_pin across collector to emitter;
quantity vbc_pin across base to collector;
quantity vrb across irb through base to n2;
quantity vrc across irc through collector to n1;
quantity vre across ire through n3 to emitter;
-- free quantities
quantity cjco, cjem : real;
quantity qb : charge := 1.0e-12;
quantity q1, q2, qde, qdc : charge;