10-2019
Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik
Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik
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RF & Wireless<br />
Complex Microwave Feed<br />
Assembly<br />
Broadband, Multistage<br />
GaN-on-Si Power Amplifier<br />
Module<br />
Link Microtek has designed and fabricated<br />
a complex microwave feed<br />
assembly for use in a customer’s Kuband<br />
mobile satellite-communications<br />
antenna system. Widely used around<br />
the world by news crews, first responders,<br />
government agencies and military<br />
units, such mobile antenna systems provide<br />
a durable and quickly deployable<br />
solution for anyone requiring reliable<br />
satellite communications facilities in<br />
remote locations.<br />
The Link Microtek assembly incorporates<br />
a feed arm, transmit and receive<br />
filters, a rotary joint and an orthomode<br />
transducer (OMT). In addition to satisfying<br />
the tight space constraints imposed<br />
by the compact nature of the antenna<br />
system, the feed assembly had to achieve<br />
strict performance criteria regarding low<br />
transmission losses and cross polarisation,<br />
as well as high isolation between<br />
transmit and receive channels. The feed<br />
arm is formed of WR75 waveguide to<br />
handle the Ku-band frequency ranges<br />
of 13.75 to 14.5 GHz for transmit and<br />
12 to 13 GHz for receive. This is linked<br />
via a length of semi-rigid waveguide to<br />
a transmit filter, which bends round to<br />
interface to the rotary joint – the purpose<br />
of which is to accommodate one of<br />
the degrees of movement as the foldaway<br />
satcom system unfurls once in situ.<br />
The simple external appearance of the<br />
rotary joint masks the complexity of its<br />
internal design, which consists of over<br />
40 separate precision-engineered parts,<br />
including connectors, pins, cages, spring<br />
mounts and bearings. On the other side<br />
of the rotary joint is the OMT. The<br />
function of this device is to separate<br />
the transmit and receive signals, and in<br />
conjunction with the receive filter the<br />
OMT achieves an impressive isolation<br />
figure of over <strong>10</strong>0 dB.<br />
■ Link Microtek Ltd<br />
www.linkmicrotek.com<br />
Richardson RFPD, Inc. announced the availability<br />
and full design support capabilities<br />
for a new <strong>10</strong> W hybrid GaN module from<br />
Macom Technology Solutions Inc. The<br />
MAMG-<strong>10</strong>0227-0<strong>10</strong> is a broadband, twostage<br />
GaN-on-Si hybrid power amplifier<br />
module in an air-cavity laminate package.<br />
The <strong>10</strong> W device is fully-matched and covers<br />
wide 225...2600 MHz frequency range. A<br />
gold-plated copper heat sink is attached to<br />
the bottom side of the laminate substrate.<br />
The package can be accessed from the top<br />
or the bottom allowing for “live bug” or<br />
“dead bug” mounting. This mounting flexibility<br />
enables streamlined designs for smaller,<br />
lighter radios. The new module is ideal<br />
for use in tactical military communications,<br />
LMR, and wireless (public safety) markets.<br />
Additional key features of the MAMG-<br />
<strong>10</strong>0227-0<strong>10</strong> include:<br />
• Fully-matched at input and output<br />
• 28 V operation (typ.); 36 V (max)<br />
• CW output power ><strong>10</strong> W<br />
• 40% PAE<br />
• 22 dB power gain<br />
• Compact size: 14 x 18 mm<br />
■ Richardson RFPD<br />
www.richardsonrfpd.com<br />
<strong>10</strong>0 W Power Limiter with<br />
Adjustable Threshold<br />
RFMW announced design and sales support<br />
for a <strong>10</strong> MHz to 6 GHz RF power limiter<br />
capable of handling <strong>10</strong>0 W of pulsed input<br />
power. The pSemi PE45361 is a monolithic<br />
structure up to 8 times smaller than discrete,<br />
PIN-diode solutions and eliminates thermal<br />
hysteresis.<br />
The adjustable input, 1 dB compression point<br />
(limiting threshold) is set from 7 to 13 dBm<br />
via a low current control voltage, eliminating<br />
the need for external bias components<br />
such as DC blocking capacitors, RF choke<br />
inductors and bias resistors. Fast response<br />
time of