12.12.2012 Aufrufe

Elektromigration in Gold und Silber Nanostrukturen

Elektromigration in Gold und Silber Nanostrukturen

Elektromigration in Gold und Silber Nanostrukturen

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Abstract<br />

Electromigration is the current <strong>in</strong>duced mass transport <strong>in</strong> metallic wires. It is the<br />

ma<strong>in</strong> reason for electrical breakdown <strong>in</strong> <strong>in</strong>tegrated circuits and has been studied for<br />

more than 50 years.<br />

In this thesis, the electromigration behavior <strong>in</strong> polycrystall<strong>in</strong>e gold as well as <strong>in</strong><br />

self-organized s<strong>in</strong>gle crystall<strong>in</strong>e silver wires are studied. To study the electromigration<br />

behavior <strong>in</strong> detail, <strong>in</strong>-situ <strong>in</strong>vestigations of the wires are performed <strong>in</strong> a scann<strong>in</strong>g electron<br />

microscope, for which a new test rig was successfully <strong>in</strong>stalled.<br />

Dur<strong>in</strong>g electromigration, the development of voids on the cathode and hillocks on<br />

the anode side of the wire are observed. This behavior is studied <strong>in</strong> detail <strong>in</strong> this thesis.<br />

Electrical breakdown <strong>in</strong> the gold wires takes place due to the presence of slit-like voids<br />

perpendicular to the current direction. The void area grows l<strong>in</strong>early dur<strong>in</strong>g the course<br />

of the experiments, and the electrical breakdown takes place when the total void area<br />

reaches a value of 2 % to 4 % of the total wire area. The <strong>in</strong>fluence of s<strong>in</strong>gle voids on the<br />

electrical resistance dur<strong>in</strong>g high current stress<strong>in</strong>g is determ<strong>in</strong>ed.<br />

The dependence of the electromigration behavior on the width and hight as well as<br />

on the crystall<strong>in</strong>ity and temperature of the gold wires is studied <strong>in</strong> detail. For high<br />

resolution imag<strong>in</strong>g of the wires dur<strong>in</strong>g the experiments, a special layout with arbitrary<br />

k<strong>in</strong>ks is used. The dependence of electromigration effects on current density and on the<br />

<strong>in</strong>fluence of the measurement setup itself are also discussed <strong>in</strong> this thesis.<br />

When revers<strong>in</strong>g the current direction, a reversible electromigration behavior is ob-<br />

served. Also, the lifetime of the wires grows considerably. Accord<strong>in</strong>g to the resistance<br />

data, a remarkable stabilization of the polycrystall<strong>in</strong>e wires is observed dur<strong>in</strong>g this ex-<br />

periments. Furthermore, it is possible to def<strong>in</strong>e an alternative Blech length accord<strong>in</strong>g to<br />

the position of voids and hillocks <strong>in</strong> the wires. This leads also to the determ<strong>in</strong>ation of<br />

the critical product for these gold wires, which agrees well with data from literature on<br />

other metallic systems.<br />

For the first time, it is possible to study electromigration with<strong>in</strong> self-organized s<strong>in</strong>gle<br />

crystall<strong>in</strong>e silver wires. Surpris<strong>in</strong>gly, the electromigration behavior is completely different<br />

from that observed for polycrystall<strong>in</strong>e gold wires. Electrical breakdown takes place at<br />

the anode side of the wire, i. e. material transport takes place aga<strong>in</strong>st the direction of<br />

the electrons. These results <strong>in</strong>dicate, that the direct force might be the dom<strong>in</strong>at<strong>in</strong>g force<br />

with<strong>in</strong> this system.

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