Optimierung der elektrischen Eigenschaften von lateralen ...

Literaturverzeichnis 177
_________________________________________________________________________________________________________________
[Mur03] Murari, B.: Smart Power Technology evolves to higher levels of complexity.
STMicroeletronics, Application Note AN447, 2003.
[NHS04] Nassif‐Khalil, S. G.; Hou, L. Z.; Salama, C. A. T.: SJ/RESURF LDMOST.
IEEE Trans. Electron Devices, Vol. 51 (2004), No. 7, pp. 1185‐1191.
[NN01] ISE TCAD Manuals, Integrated System Engineering AG, Release 7.0,
Vol. 4a, Zürich, 2001.
[NUA00] Ng, R.; Udrea, F.; Amaratunga, G.: An Analytical Model for the 3D‐
RESURF effect. Solid‐State Electron, Vol. 44 (2000), pp. 1753‐1764.
[OM70] Overstraeten, R. V.; Man, H. D.: Measurement of the ionization rates in
diffused Silicon p‐n junctions. Solid‐State Electron, Vol. 13 (1970), pp. 583‐
608.
[Pau92] Paul, R.: Elektronische Halbleiterbauelemente. Stuttgart, B. G. Teubner,
1992.
[Pau94] Paul, R.: MOS‐Feldeffekttransistoren. Berlin, Heidelberg, Springer‐Verlag,
1994.
[PCW67] Prager, H. J.; Chang, K. K. N.; Weisbrod, S.: High‐Power high‐efficiency
silicon avalanche diodes at ultra high frequencies. In: Proc. IEEE Lett., Vol.
55 (1967), pp. 586‐587.
[PUR03] Pathirana, G. P. V.; Udrea, F.; Ng, R.; Garner, D. M.; Amaratunga, G. A.
J.: 3D‐RESURF SOI LDMOSFET For RF Power Amplifiers. In: Proc.
ISPSD, 2003, pp. 278‐281.
[Ram93] Ramshaw, R. S.: Power Electronics Semiconductor Switches. London,
Second Edition, Chapman & Hall, 1993.
[RM91] Ruge, I.; Mader, H.: Halbleiter‐Technologie. Berlin, Heidelberg, Springer‐
Verlag, 1991.
[SBD99] Shenoy, P. M.; Bhalla, A.; Dolny, G. M.: Analysis of the Effect of Charge
Imbalance on the Static and Dynamic Characteristics of the Super Junction
MOSFET. In: Proc. ISPSD, 1999, pp. 99‐102.
[Sch55] Schrieffer, J. R.: Effective Carrier Mobility in Surface‐Space Charge Layers.
Phys. Rev., Vol. 97 (1955), pp. 641‐646.