Optimierung der elektrischen Eigenschaften von lateralen ...
Optimierung der elektrischen Eigenschaften von lateralen ...
Optimierung der elektrischen Eigenschaften von lateralen ...
Erfolgreiche ePaper selbst erstellen
Machen Sie aus Ihren PDF Publikationen ein blätterbares Flipbook mit unserer einzigartigen Google optimierten e-Paper Software.
174 Literaturverzeichnis<br />
_________________________________________________________________________________________________________________<br />
[BRF83] Bank, R. E.; Rose D. J.; Fichtner, W.: Numerical Methods for Semiconductor<br />
Device Simulation. IEEE Trans. Electron Devices, Vol. ED‐30 (1983), pp.<br />
1031‐1041.<br />
[Chy58] Chynoweth, A. G.: Ionization rates for electrons and holes in Silicon. Phys.<br />
Rev., Vol. 109 (1958), No. 5, pp. 1537‐1540.<br />
[CMM75] Canali, C.; Majini, G.; Min<strong>der</strong>, R.; Ottaviani, G.: Electron and Hole Drift<br />
Velocity Measurements in Silicon and Their Empirical Relation to Electric<br />
Field and Temperature. IEEE Trans. Electron Devices, Vol. ED‐22 (1975),<br />
pp. 1045‐1047.<br />
[CT67] Caughey, D. M.; Thomas, R. E.: Carrier Mobilities in Silicon Empirically<br />
Related to Doping and Field. In: Proc. IEEE, Vol. 55 (1967), pp. 2192‐2193.<br />
[DL91] Dogan, N. S.; Lozano, E.: A New Device Model of VDMOSFET for SPICE<br />
Simulations. In: Proc. ISPSD, 1991, pp. 84‐88.<br />
[DMS98] Deboy, G.; März, M.; Stengl, J. –P.; Strack, H.; Tihanyi, J.; Weber, H.: A<br />
new generation of high voltage MOSFETs breaks the limit line of silicon. In:<br />
IEDM Tech. Dig., 1998, pp. 683‐685.<br />
[DS77] Dziewior, J.; and Schmid, W.: Auger Coefficients for Highly Doped and<br />
Highly Excited Silicon. Appl. Phys. Lett., 31 (1977), pp. 346‐348.<br />
[FJ86] Frank, R.; Janikowski, R.: Trends in Power IC development. In: Proc. PCIM,<br />
1986, pp. 26‐29.<br />
[FL82] Fossum, J. G.; Lee, D. S.: A Physical Model for the Dependence of Carrier<br />
Lifetime on Doping Density in Nondegenerate Silicon. Solid‐State Electron.,<br />
Vol. 25 (1982), No. 8, pp. 741‐747.<br />
[FML83] Fossum, J. G.; Mertens, R. P.; Lee, D. S.; Nijs, J. F.: Carrier Recombination<br />
and Lifetime in Highly Doped silicon. Solid‐State Electron., Vol. 26 (1983),<br />
No. 6, pp. 569‐576.<br />
[FOS76] Fossum, J. G.: Computer‐Aided Numerical Analysis of Silicon Solar Cells.<br />
Solid‐State Electron., Vol. 19 (1976), pp. 269‐277.<br />
[Fuj97] Fujihira, T.: Theory of Semiconductor Superjunction Devices. Jpn. J. Appl.<br />
Phys., Vol. 36 (1997), Part I, No. 10, pp. 6254‐6262.