Application Manual Power Semiconductors - Deutsche ... - Semikron

Literaturverzeichnis
Literaturverzeichnis
[AN1]
[AN2]
[AN3]
[AN4]
[AN5]
[AN6]
AN-7006: IGBT Peak Voltage Measurement and Snubber Capacitor Specification;
www.semikron.com
AN-8003: SEMIKUBE B6CI USER MANUAL, SEMIKUBE selection guide;
www.semikron.com
AN-7002: Connection of Gate Drivers; www.semikron.com
AN-9001: IGBT4 and free wheeling diode CAL4 in IGBT modules; www.semikron.com
AN-7003: Gate Resistor; www.semikron.com
AN-7004: IGBT Driver Calculation; www.semikron.com
[1] Backlund, B.; Rahimo, M.: „High Voltage Bipolar Semiconductor Technologies“, Bodo’s
Power Systems, 12/2009, pp. 34-36
[2] Kaminski, N.: „State of the Art and the Future of Wide Band-Gap Devices“, EPE 2009,
Conference Proceedings
[3] Majumdar, G.; Oomori, T.: „Some key researches on SiC device technologies and their
predicted advantages“, EPE 2009, Conference Proceedings
[4] Silber, D.; Novak, W.-D.; Wondrak, W.; Thomas, B.; Berg, H.: „Improved Dynamic Properities
of GTO-Thyristors and Diodes by Proton Implantation“, Electron Device Meeting, 1985
[5] Lutz, J.; Scheuermann, U.: „Advantages of the New Controlled Axial Lifetime Diode“, PCIM
Europe 1994, Conference Proceedings
[6] Lutz, J.: „Axial Recombination Center Technology for Freewheeling Diodes“, EPE 1997,
Conference Proceedings
[7] Lutz, J.: „The Freewheeling Diode -No Longer the Weak Component“, PCIM Europe 1997,
Conference Proceedings
[8] Weber, A.; Galsterer, N.; Tsyplakow, E.: „A New Generation of Asymetric and Reverse
Conducting GTOs and Their Snubber Diodes”, PCIM Europe 1997, Conference Proceedings
[9] Baliga, B.J.: „Analysis of a High Voltage Merged p-i-n/Schottky (MPS) Rectifier“, IEEE El.
Dev. Letters Vol. Edl.-8, No.9 (1987)
[10] Sze, S.M.: „Physics of Semiconductor Devices“, John Wiley & Sons, Inc., New York, 2006,
ISBN 978-0471143239
[11] Dannhäuser, F.; Krausse, J.: „Die Abhängigkeit der Trägerbeweglichkeit in Silizium von
der Konzentration der freien Ladungsträger“, Solid State Electronics Vol. 15, pp. 1371-
1381, (1972)
[12] Baliga, B.J.: „Modern Power Devices“, John Wiley & Sons, Inc., New York, 1987
[13] Wolley, E.D.; Bevaqua, S.F.: „High speed, soft recovery epitaxial diodes for power inverter
circuits“, IEEE IAS Meeting Digest; 1981
[14] Silber, D.: „Leistungsbauelemente: Funktionsprinzipien und Entwicklungstendenzen“,
ETG-Fachtagung „Bauelemente der Leistungselektronik und ihre Anwendungen“, Bad
Nauheim 1998, Proceedings, pp. 9-25
[15] Satoh,K.; Takahashi, T.; Fujii, H.; Yoshino, M.; Donlon, J.F.: „New chip design technology
for next generation power module“, PCIM Europe 2007, Conference Proceedings
[16] Bayerer, R.: „Higher Junction Temperature in Power Modules – a demand from hybrid
cars, a potential for the next step increase in power density for various Variable Speed
Drives“, PCIM Europe 2008, Conference Proceedings
439