Application Manual Power Semiconductors - Deutsche ... - Semikron

3 Datenblattangaben für MOSFET, IGBT, Dioden und Thyristoren
SEMiX302GB12E4s
SEMiX302GB12E4s
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
IC
Tj = 175 °C
Tc = 25 °C 463 A
Tc = 80 °C 356 A
ICnom 300 A
ICRM ICRM = 3xICnom 900 A
SEMiX ® 2s
Trench IGBT Modules
VGES -20 ... 20 V
VCC = 800 V
tpsc VGE ≤ 20 V Tj = 150 °C 10 µs
VCES ≤ 1200 V
Tj -40 ... 175 °C
Inverse diode
SEMiX302GB12E4s
IF
Tc = 25 °C 356 A
Tj = 175 °C
Tc = 80 °C 266 A
300 A
IFnom
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5 Ω
RGoff,main = 0,5 Ω
RG,X = 2,2 Ω
RE,X = 0,5 Ω
IFRM IFRM = 3xIFnom 900 A
IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1620 A
Tj -40 ... 175 °C
Module
It(RMS) 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat)
IC = 150 A
1.8 2.05 V
Tj = 25 °C
VGE = 15 V
chiplevel
Tj = 150 °C 2.2 2.4 V
VCE0 Tj = 25 °C 0.8 0.9 V
Tj = 150 °C 0.7 0.8 V
rCE
Tj = 25 °C 3.3 3.8 mΩ
VGE = 15 V
Tj = 150 °C 5.0 5.3 mΩ
VGE(th) VGE=VCE, IC = 12 mA 5 5.8 6.5 V
ICES
= 0 V Tj = 25 °C 0.1 0.3 mA
VGE
VCE = 1200 V Tj = 150 °C
mA
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Cies
f = 1 MHz 18.6 nF
VCE = 25 V
Coes f = 1 MHz 1.16 nF
VGE = 0 V
Cres f = 1 MHz 1.02 nF
QG VGE = - 8 V...+ 15 V 1700 nC
RGint Tj = 25 °C 2.50 Ω
td(on)
VCC = 600 V Tj = 150 °C 282 ns
IC = 300 A
tr Tj = 150 °C 60 ns
Eon Tj = 150 °C
RG on = 1.9 Ω
30 mJ
td(off) RG off = 1.9 Ω Tj = 150 °C 564 ns
tf di/dton = 5000 A/µs Tj = 150 °C 117 ns
di/dtoff = 2800 A/µs
Eoff Tj = 150 °C 44 mJ
Rth(j-c) per IGBT 0.096 K/W
GB
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 2 – 05.03.2010 1
© by SEMIKRON Rev. 2 – 05.03.2010 3
SEMiX302GB12E4s
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON Rev. 2 – 05.03.2010 5
Bild 3.3.1 Datenblattstruktur von SEMIKRON IGBT-Modulen
Das Deckblatt enthält neben der Bezeichnung und einer Ansicht des Moduls tabellarisch die
Grenzwerte und Kennwerte, meist fortgesetzt auf einem weiteren Blatt. Bei den Kennwerten sind
die Angaben sofern sinnvoll in minimale, typische und maximale Kennwerte unterteilt.
159