Adsorbat-modifiziertes Wachstum ultradünner Seltenerdoxid ... - E-LIB

Literaturverzeichnis
[133] Lay, G. L.: Physics and electronics of the noble-metal/elementalsemiconductor
interface formation: A status report. In: Surf. Sci. 132 (1983),
S. 169–204. DOI: 10.1016/0039-6028(83)90537-X
[134] Katayama, M.; Williams, R. S.; Kato, M.; Nomura, E.; Aono, M.: Structure
analysis of the Si(111) √ 3× √ 3 R30°-Ag surface. In: Phys. Rev. Lett. 66
(1991), S. 2762–2765. DOI: 10.1103/PhysRevLett.66.2762
[135] Ding, Y. G.; Chan, C. T.; Ho, K. M.: Structure of the ( √ 3× √ 3)R30°
Ag/Si(111) surface from first-principles calculations. In: Phys. Rev. Lett. 67
(1991), S. 1454–1457. DOI: 10.1103/PhysRevLett.67.1454
[136] Chen, D. M.; Golovchenko, J. A.; Bedrossian, P.; Mortensen, K.: Tunneling
images of gallium on a silicon surface: Reconstructions, superlattices,
and incommensuration. In: Phys. Rev. Lett. 61 (1988), S. 2867–2870. DOI:
10.1103/PhysRevLett.61.2867
[137] Kawazu, A.; Sakama, H.: Geometric structure of the Si(111) √ 3× √ 3-
Ga surface. In: Phys. Rev. B 37 (1988), S. 2704–2706. DOI:
10.1103/PhysRevB.37.2704
[138] Otsuka, M.; Ichikawa, T.: New Ga-induced superstructures on Si(111)
surfaces. In: Jpn. J. Appl. Phys. 24 (1985), S. 1103–1104. DOI:
10.1143/JJAP.24.1103
[139] Gangopadhyay, S.: Growth, Surface Structure and Morphology of Semiconductor
Nano-Structures, Universität Bremen, Diss., 2006
[140] Schmidt, Th.; Gangopadhyay, S.; Flege, J. I.; Clausen, T.; Locatelli,
A.; Heun, S.; Falta, J.: Self-organized 2D nanopatterns after lowcoverage
Ga adsorption on Si (111). In: New J. Phys. 7 (2005), S. 193. DOI:
10.1088/1367-2630/7/1/193
[141] Patel, J. R.; Zegenhagen, J.; Freeland, P. E.; Hybertsen, M. S.: Arsenic
and gallium atom location on silicon(111). In: J. Vac. Sci. Technol. B 7
(1989), S. 894–900. DOI: 10.1116/1.584576
[142] Zegenhagen, J.; Hybertsen, M. S.; Freeland, P. E.; Patel, J. R.: Monolayer
growth and structure of Ga on Si(111). In: Phys. Rev. B 38 (1988),
S. 7885–7888. DOI: 10.1103/PhysRevB.38.7885
[143] Zarraga-Colina, J.; Nix, R. M.; Weiss, H.: A novel approach to the
epitaxial growth of CeO 2 films on Si(111). In: Surf. Sci. 563 (2004), S.
L251–L255. DOI: 10.1016/j.susc.2004.06.156
[144] Nagata, H.; Yoshimoto, M.; Koinuma, H.; Min, E.; Haga, N.: Type-B
epitaxial growth of CeO 2 thin film on Si(111) substrate. In: J. Cryst. Growth
123 (1992), S. 1–4. DOI: 10.1016/0022-0248(92)90004-3
192