Adsorbat-modifiziertes Wachstum ultradünner Seltenerdoxid ... - E-LIB

Literaturverzeichnis
[20] Hubbard, K. J.; Schlom, D. G.: Thermodynamic stability of binary oxides
in contact with silicon. In: J. Mater. Res 11 (1996), S. 2757–2776. DOI:
10.1557/PROC-357-331
[21] Yamada, H.; Shimizu, T.; Kurokawa, A.; Ishii, K.; Suzuki, E.: MOCVD
of high-dielectric-constant lanthanum oxide thin films. In: J. Electrochem. Soc.
150 (2003), S. G429–G435. DOI: 10.1149/1.1585055
[22] Ta, M.-T.; Briand, D.; Guhel, Y.; Bernard, J.; Pesant, J. C.; Boudart,
B.: Growth and structural characterization of cerium oxide thin films realized
on Si(111) substrates by on-axis r.f. magnetron sputtering. In: Thin Solid
Films 517 (2008), S. 450–452. DOI: 10.1016/j.tsf.2008.08.059
[23] Robertson, J.: High dielectric constant oxides. In: Eur. Phys. J. Appl. Phys.
28 (2004), S. 265–291. DOI: doi:10.1051/epjap:2004206
[24] Esch, F.; Fabris, S.; Zhou, L.; Montini, T.; Africh, C.; Fornasiero,
P.; Comelli, G.; Rosei, R.: Electron localization determines defect
formation on ceria substrates. In: Science 309 (2005), S. 752–755. DOI:
10.1126/science.1111568
[25] Inoue, T.; Yamamoto, Y.; Koyama, S.; Suzuki, S.; Ueda, Y.: Epitaxial
growth of CeO 2 layers on silicon. In: Appl. Phys. Lett. 56 (1990), S. 1332–1333.
DOI: 10.1063/1.103202
[26] Adachi, G.-y.; Imanaka, N.: The binary rare earth oxides. In: Chem. Rev.
98 (1998), S. 1479–1514. DOI: 10.1021/cr940055h
[27] Henle, W. A.; Ramsey, M. G.; Netzer, F. P.; Cimino, R.; Braun,
W.; Witzel, S.: Reactions at the Gd-Si(111)7×7 interface: Promotion
of Si oxidation. In: Phys. Rev. B 42 (1990), S. 11073–11078. DOI:
10.1103/PhysRevB.42.11073
[28] Preisler, E. J.; Marsh, O. J.; Beach, R. A.; McGill, T. C.: Stability of
cerium oxide on silicon studied by X-ray photoelectron spectroscopy. In: J.
Vac. Sci. Technol. B 19 (2001), S. 1611–1618. DOI: 10.1116/1.1387464
[29] Ono, H.; Katsumata, T.: Interfacial reactions between thin rare-earth-metal
oxide films and Si substrates. In: Appl. Phys. Lett. 78 (2001), S. 1832–1834.
DOI: 10.1063/1.1357445
[30] Leskelä, M.; Ritala, M.: Rare-earth oxide thin films as gate oxides in
MOSFET transistors. In: J. Solid State Chem. 171 (2003), S. 170–174. DOI:
10.1016/S0022-4596(02)00204-9
[31] Nishikawa, Y.; Yamaguchi, T.; Yoshiki, M.; Satake, H.; Fukushima,
N.: Interfacial properties of single-crystalline CeO 2 high-k gate dielectrics
directly grown on Si (111). In: Appl. Phys. Lett. 81 (2002), S. 4386–4388.
DOI: 10.1063/1.1526169
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