Adsorbat-modifiziertes Wachstum ultradünner Seltenerdoxid ... - E-LIB

Literaturverzeichnis
[10] Chikyow, T.; Bedair, S. M.; Tye, L.; El-Masry, N. A.: Reaction and
regrowth control of CeO 2 on Si(111) surface for the silicon-on-insulator structure.
In: Appl. Phys. Lett. 65 (1994), S. 1030–1032. DOI: 10.1063/1.113011
[11] Schroeder, T.; Giussani, A.; Dabrowski, J.; Zaumseil, P.; Müssig, H.-
J.; Seifarth, O.; Storck, P.: Engineered Si wafers: On the role of oxide heterostructures
as buffers for the integration of alternative semiconductors. In:
Phys. Status Solidi C 6 (2009), S. 653–662. DOI: 10.1002/pssc.200880715
[12] Liu, K.-C.; Tzeng, W.-H.; Chang, K.-M.; Chan, Y.-C.; Kuo, C.-C.;
Cheng, C.-W.: The resistive switching characteristics of a Ti/Gd 2 O 3 /Pt
RRAM device. In: Microelectron. Reliab. 50 (2010), S. 670–673. DOI:
10.1016/j.microrel.2010.02.006
[13] Miranda, E.; Kano, S.; Dou, C.; Kakushima, K.; né, J. S.; Iwai,
H.: Nonlinear conductance quantization effects in CeO x /SiO 2 -based resistive
switching devices. In: Appl. Phys. Lett. 101 (2012), S. 012910. DOI:
10.1063/1.4733356
[14] Narayanan, V.; Guha, S.; Copel, M.; Bojarczuk, N. A.; Flaitz, P. L.;
Gribelyuk, M.: Interfacial oxide formation and oxygen diffusion in rare
earth oxide–silicon epitaxial heterostructures. In: Appl. Phys. Lett. 81 (2002),
S. 4183–4185. DOI: 10.1063/1.1524692
[15] Marsella, L.; Fiorentini, V.: Structure and stability of rare-earth and
transition-metal oxides. In: Phys. Rev. B 69 (2004), S. 172103. DOI:
10.1103/PhysRevB.69.172103
[16] Triyoso, D. H.; Hegde, R. I.; Grant, J.; Fejes, P.; Liu, R.; Roan, D.;
Ramon, M.; Werho, D.; Rai, R.; La, L. B.; Baker, J.; Garza, C.; Guenther,
T.; B. E. White, Jr.; Tobin, P. J.: Film properties of ALD HfO 2 and
La 2 O 3 gate dielectrics grown on Si with various pre-deposition treatments. In:
J. Vac. Sci. Technol. B 22 (2004), S. 2121–2127. DOI: 10.1116/1.1773840
[17] Osten, H. J.; Laha, A.; Czernohorsky, M.; Bugiel, E.; Dargis, R.;
Fissel, A.: Introducing crystalline rare-earth oxides into Si technologies. In:
Phys. Status Solidi A 205 (2008), S. 695–707. DOI: 10.1002/pssa.200723509
[18] Nichau, A.; Schnee, M.; Schubert, J.; Besmehn, A.; Rubio-Zuazo, J.;
Breuer, U.; Bernardy, P.; Holländer, B.; Mücklich, A.; Castro,
G. R.; Borany, J. von; Buca, D.; Mantl, S.: Photoemission spectroscopy
study of the lanthanum lutetium oxide/silicon interface. In: J. Chem. 138
(2013), S. 154709. DOI: 10.1063/1.4801324
[19] Wang, Y.; Wei, F.; Yue, S.; Yang, Z.; Du, J.: Epitaxial growth of HfO 2
doped CeO 2 thin films on Si(001) substrates for high-k application. In: Appl.
Phys. Lett. 92 (2008), S. 012915. DOI: 10.1063/1.2829792
182